Senior Level Semiconductor Technology Development High Voltage Analog Device Engineer

The Senior Level Semiconductor High Voltage LNDMOS (Laterally Diffused N-type Metal-Oxide-Semiconductor) Device Engineer at Diodes, Inc. plays a pivotal role in the design, development, and optimization of high voltage power semiconductor devices. This specialist is responsible for advancing LNDMOS technology to enable reliable, efficient, and high-performance solutions for applications ranging from automotive, industrial, and consumer electronics to renewable energy systems. Bridging the gap between theoretical device physics and practical manufacturing, the LNDMOS Device Engineer ensures the delivery of robust products that meet stringent industry standards. This device engineer will be part of the Diodes, Inc. worldwide technology development organization and will work with a team of industry experts designing and developing analog semiconductor process technologies for Diodes products for both internal and external production. Work location will either be the Diodes, Inc. fabrication site in South Portland, Maine (USA) or other offices situated throughout the world.

Principal Duties and Responsibilities:

• Device Design and Development: Lead and execute the design of high voltage LNDMOS devices, considering breakdown voltage, on-resistance, charge balance, and ruggedness. Utilize CAD and TCAD simulation tools to model electrical, thermal, and reliability characteristics, iterating designs to achieve optimal performance.
• Process Integration: Collaborate closely with process engineers to define and refine process flows for LNDMOS device fabrication. Evaluate and select suitable materials, doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield.
• Device Characterization: Plan and conduct electrical, thermal, and reliability characterization of fabricated devices. Analyze test data to validate models, extract key device parameters, and identify areas for improvement.
• Technology Innovation: Research and implement new architectures, materials, and device structures (e.g., trench, superjunction, shielded gate) to push the boundaries of LNDMOS performance. Stay abreast of academic and industry advances, proposing innovative solutions for future products.
• Failure Analysis and Problem Solving: Investigate device failures using advanced diagnostic tools (SEM, TEM, FIB, EDX, etc.), root-cause analysis, and simulation. Recommend corrective actions and support continuous improvement efforts.
• Cross-functional Collaboration: Interface with teams across device design, process engineering, test and characterization, packaging, and product engineering to ensure seamless development and launch of LNDMOS-based products.
• Documentation and Reporting: Produce detailed technical documentation, including design specifications, simulation reports, process flows, and characterization results. Present findings to both technical and non-technical stakeholders.
• Product Qualification and Reliability: Support product qualification cycles by designing and executing reliability tests (e.g., HTRB, TDDB, ESD, UIS) and working with quality teams to meet international standards and customer requirements.
• Yield Enhancement and Cost Optimization: Analyze manufacturing data to identify yield detractors and cost drivers, working with manufacturing teams to implement solutions for device and process improvement.
• Technical Support: Provide guidance and expertise to application engineers, field teams, and customers for integrating LNDMOS devices into end applications, troubleshooting, and ensuring optimal performance.