The Semiconductor High Voltage LNDMOS Device Engineer

The Semiconductor High Voltage LNDMOS (Laterally Diffused N-type Metal-Oxide-Semiconductor) Device Engineer at Diodes, Inc. plays a pivotal role in the design, development, and optimization of high voltage power semiconductor devices. This person is responsible for advancing LNDMOS technology to enable reliable, efficient, and high-performance solutions for applications ranging from automotive, industrial, and consumer electronics to renewable energy systems. Focus will be on developing device and process technologies addressing voltages of 7 – 100 V with either junction or deep trench isolation. Bridging the gap between theoretical device physics and practical manufacturing, the LNDMOS Device Engineer ensures the delivery of robust products that meet stringent industry standards.

Principal Duties and Responsibilities

• Device Design and Development: Lead and execute the design of high voltage LNDMOS devices, considering breakdown voltage, on-resistance, charge balance, and ruggedness. Utilize CAD and TCAD simulation tools to model electrical, thermal, and reliability characteristics, iterating designs to achieve optimal performance. Device voltages will be over 7 volts and as high as 120 volts, and devices will be isolated either by junctions or deep trenches.
• Process Integration: Collaborate closely with process engineers to define and refine process flows for LNDMOS device fabrication. Evaluate and select suitable materials, doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield.
• Device Characterization: Plan and conduct electrical, thermal, and reliability characterization of fabricated devices. Understanding how to characterize device isolation, whether by junctions or deep trenches, is especially important. Analyze test data to validate models, extract key device parameters, and identify areas for improvement.
• Technology Innovation: Research and implement new architectures, materials, and device structures (e.g., trench, RESURF, shielded gate) to push the boundaries of LNDMOS performance. Stay abreast of academic and industry advances, proposing innovative solutions for future products.
• Cross-functional Collaboration: Interface with teams across device design, process engineering, test and characterization, packaging, and product engineering to ensure seamless development and launch of LNDMOS-based products.
• Documentation and Reporting: Produce detailed technical documentation, including design specifications, simulation reports, process flows, and characterization results. Present findings to both technical and non-technical stakeholders.
• Technical Support: Provide guidance and expertise to application engineers, field teams, and customers for integrating LNDMOS devices into end applications, troubleshooting, and ensuring optimal performance.