DSJ Global
Senior Development Engineer (M/F/D)
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Senior Development Engineer (M/F/D)
Semiconductor Device Engineer – GaN Power Devices (Wide-Bandgap)
About the Role
Our client is a global semiconductor innovator, pioneering next-generation Gallium Nitride (GaN) power technologies that are transforming sectors such as AI infrastructure, renewable energy, industrial automation, data centres, electric mobility, and advanced robotics.
This opportunity provides the chance to develop and optimise advanced GaN power devices, converting cutting-edge device physics into scalable, real-world products while working on complex technical challenges, shaping future technology roadmaps, and collaborating with industry-leaders in device development, process technology, and product engineering.
Responsibilities
- Lead the development and optimisation of advanced GaN power device architectures
- Define performance goals, balancing trade-offs between efficiency, reliability, and manufacturability
- Drive TCAD simulation, modelling, and device design to support technology and product development
- Analyse device behaviour, identifying opportunities to enhance efficiency, robustness, and performance
- Collaborate closely with process integration, characterisation, reliability, and product engineering teams
- Support the industrialisation of new device concepts and technologies
- Contribute technical expertise to strategic roadmaps for both technology and product innovation
- Lead multidisciplinary technical projects and drive innovation in a global R&D environment
- Mentor junior engineers and support team growth
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Requirements
Essential:
- MSc, PhD, or equivalent in Semiconductor Physics, Electrical Engineering, Microelectronics, or a related discipline
- Proven industry experience in semiconductor device development, ideally within GaN, SiC, or wide-bandgap technologies
- Strong understanding of semiconductor device physics and power semiconductor design
- Hands-on experience with TCAD simulation tools and device modelling
- Ability to optimise device performance, reliability, and manufacturability using analytical and simulation-based approaches
- Experience collaborating across multidisciplinary teams (process, reliability, product engineering)
- Strong technical communication and influence skills
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Highly Desirable:
- Direct experience with GaN power devices, including HEMT structures, p-GaN, e-mode, or advanced GaN technologies
- Knowledge of GaN-on-Silicon or other wide-bandgap process technologies
- Experience supporting technology transfer or industrialisation efforts
- Understanding of device reliability mechanisms and failure analysis
- Previous leadership in semiconductor R&D technical projects
Benefits
- Work on cutting-edge technologies within the explosive GaN semiconductor sector
- Directly shape next-generation power devices and product roadmaps
- Collaborate with leading semiconductor and power electronics experts
- Join a high-impact team addressing engineering challenges with real-world transformation
- Access to applications in AI, renewables, electrification, and robotics
- Flexible working with a focus on work-life balance
- Competitive compensation and comprehensive benefits package
- Ongoing training, career development, and international work opportunities at the forefront of wide-bandgap innovation
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